MBF10K Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
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Lista de partido
MBF10K Datasheet PDF : 4 Pages
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Silicon Bridge Rectifiers
Production specification
MBF10J--MBF10M
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Parameter
Symbol
Test conditions
Typ.
Max.
Maximum instantaneous
forward voltage
VF
IF=1.0A Per Diode
--
1.15
Rated VR,
@TA=25°C
--
5
Maximum Reverse current
IR
Per Diode
@TA=125°C
--
100
Units
V
μA
MBF701AA
Rev.B
www.gmesemi.com
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