MBF10N Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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MBF10N

Silicon Bridge Rectifiers

Galaxy Semi-Conductor 

Silicon Bridge Rectifiers

Production specification

MBF10N

Features

 Glass passivated junction

 High surge current capability

 Saves space on printed circuit boards

 High temperature soldering guaranteed:

260°C/10 seconds

 RoHS Compliant

Mechanical Data

 Case: Molded plastic body RoHS-compliant

 Molding compound meets UL 94 V-0 flammability rating

 Terminals: Lead Free Plating (Matte Tin Finish.)

 Polarity indicator: As marked on body

Maximum Ratings (@TA = 25°C unless otherwise specified)

Characteristic

Symbol

MBF10N

Peak repetitive reverse voltage

VRRM

1200

RMS reverse voltage

VRMS

840

DC blocking voltage

VDC

1200

Maximum average forward output current

IF(AV)

1.0

Peak forward surge current,

@TJ= 25°C

IFSM

30

8.3ms single half-sine-wave

I2t Rating for fusing

@TJ= 25°C

I2t

3.7

Thermal Characteristics

Parameter

Symbol

MBF10N

R ΘJA

67

Typical thermal resistance per leg

(Note 1)

R ΘJC

24

R ΘJL

13

Operating junction temperature range

TJ

- 55 ---- + 150

Storage temperature range

TSTG

- 55 ---- + 150

Note:

1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas

Units

V

V

V

A

A

A2s

Units

°C/W

°C

°C

MBF722AA

Rev.B

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