MBFH25S Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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MBFH25S

Schottky Bridge Rectifiers

Galaxy Semi-Conductor 

Schottky Bridge Rectifiers

Production specification

MBFH25S--MBFH26S

Electrical Characteristics (@TA = 25°C unless otherwise specified)

Parameter

Symbol

Test conditions

Typ.

Max.

Maximum instantaneous

forward voltage(Note 1)

I F =2.0A

VF

@TA=25°C

--

Per Diode

0.75

Maximum Reverse current

Rated VR,

@TJ=25°C

--

500

IR

(Note 2)

Per Diode

@TJ=100°C

--

20

Note:

1.Pulse test: 300us pulse width, 1 % duty cycle

2.Pulse test: Pulse width 40ms

Units

V

μA

mA

MBF713AA

Rev.B

www.gmesemi.com

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