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2N3904DCSM Datasheet PDF : 3 Pages
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SILICON EPITAXIAL
DUAL NPN TRANSISTORS
2N3904DCSM
ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
Min.
ICBO
Collector-Cut-Off Current VCB = 30V
IE = 0
IEBO
Emitter Cut-Off Current
VEB = 3V
IC = 0
V(BR)CBO
Collector-Base Breakdown
Voltage
IC = 10µA
60
V(BR)CEO(2)
Collector-Emitter
Breakdown Voltage
IC = 1.0mA
40
V(BR)EBO
Emitter-Base Breakdown
Voltage
IE = 10µA
6
IC = 0.1mA
40
IC = 1.0mA
70
hFE(2)
Forward-current transfer
ratio
IC = 10mA
VCE = 1.0V
100
IC = 50mA
60
IC = 100mA
30
VBE(sat)(2)
VCE(sat)(2)
Base-Emitter Saturation
Voltage
Collector-Emitter Saturation
Voltage
IC = 10mA
IC = 50mA
IC = 10mA
IC = 50mA
IB = 1.0mA
IB = 5mA
IB = 1.0mA
IB = 5mA
0.65
VBE(f)(2)
Forward Base-Emitter
Voltage
IB = 500mA
IB = 200mA
TA = 100°C
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 10mA
VCE = 20V
300
f = 100MHz
hfe
Small-Signal Current Gain
IC = 1.0mA
VCE = 10V
100
f = 1.0KHz
Cobo
Output Capacitance
VCB = 5V
f = 1.0MHz
IE = 0
Cibo
Input Capacitance
VEB = 0.5V
f = 1.0MHz
IC = 0
NF(3)
Noise Figure
IC = 100 µA
RS = 1.0KΩ
VCE = 5V
f = 10Hz To 15.7KHz
td
Delay Time
VCC = 3V
VBE = 0.5V
tr
Rise Time
IC = 10mA
IB1 = 1.0mA
ts
Storage Time
VCC = 3V
IC = 10mA
tf
Fall Time
IB1 = IB2 = 1.0mA
Typ
Max.
30
30
Units
nA
V
300
0.85
0.95
0.2
V
0.3
1.45
2
MHz
400
4
pF
8
5
dB
35
35
ns
200
50
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
(3) By design only, not a production test.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9009
Website: http://www.semelab-tt.com
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