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CHDTC115EEPT Ver la hoja de datos (PDF) - CHENMKO CO., LTD.

Número de pieza
componentes Descripción
Lista de partido
CHDTC115EEPT
CHENMKO
CHENMKO CO., LTD. CHENMKO
CHDTC115EEPT Datasheet PDF : 3 Pages
1 2 3
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 20 mAmpere
CHDTC115EEPT
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=100kΩ, Typ. )
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
MARKING
EED
CIRCUIT
Gnd
In
2
1
R2
TR
R1
3
Out
SC-75/SOT-416
0.2±00..015
1.0±0.1
0.5
0.5
1.6±0.2
0.3±00..015 0.8±0.10.2±00..015
0.15±0.05
0.1Min.
1.6±0.2
0.6~0.9
0~0.1
Dimensions in millimeters
SC-75/SOT-416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
VIN
Input voltage
IO
IC(Max.)
DC Output current
PTOT
Total power dissipation
Tamb 25 OC, Note 1
TSTG
Storage temperature
TJ
Junction temperature
RθJ-S
Thermal resistance
junction - soldering point
MIN.
-10
55
Note
1. Transistor mounted on an FR4 printed-circuit board.
MAX.
50
+40
20
100
150
+150
150
150
UNIT
V
V
mA
mW
OC
OC
OC/W
2003-12

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