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MMDFS2P102R2

FETKY MOSFET and Schottky Rectifier

Motorola => Freescale 

MMDFS2P102

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (1)

Characteristic

Symbol Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Voltage

(VGS = 0 Vdc, ID = 0.25 mA)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

25

—

Vdc

—

mV/°C

Zero Gate Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (2)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)

Temperature Coefficient (Negative)

IDSS

—

—

—

—

IGSS

—

—

VGS(th)

1.0

1.5

—

4.0

µAdc

1.0

10

100

nAdc

Vdc

2.0

—

mV/°C

Static Drain–Source Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 2.5 Adc)

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (3)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

DRAIN SOURCE DIODE CHARACTERISTICS

Forward On–Voltage (2)

Reverse Recovery Time

(IS = 2.0 Adc,

VGS = 0 Vdc)

(IS = 2.0 Adc, VDD = 15 V,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

RDS(on)

—

—

gFS

2.0

Ciss

—

Coss

—

Crss

—

td(on)

—

tr

—

td(off)

—

tf

—

QT

—

Q1

—

Q2

—

Q3

—

VSD

—

trr

—

ta

—

tb

—

QRR

—

0.118

0.152

3.0

420

290

116

19

66

25

37

15

1.2

5.0

4.0

1.5

38

17

21

0.034

0.160

0.180

—

Ohms

mhos

588

pF

406

232

38

ns

132

50

74

20

nC

—

—

—

V

2.1

—

ns

—

—

—

µC

SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Maximum Instantaneous Forward Voltage (2)

IF = 1.0 A

IF = 2.0 A

VF

TJ = 25°C

0.47

0.58

TJ = 125°C

0.39

0.53

Volts

Maximum Instantaneous Reverse Current (2)

VR = 20 V

IR

TJ = 25°C

TJ = 125°C

mA

0.05

10

Maximum Voltage Rate of Change

VR = 20 V

(1) Negative sign for P–channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2.0%.

(3) Switching characteristics are independent of operating temperature.

dV/dt

10,000

V/ms

Motorola TMOS Product Preview Data

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