L9904 Ver la hoja de datos (PDF) - STMicroelectronics
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L9904 Datasheet PDF : 17 Pages
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L9904
Table 5. Electrical Characteristcs (continued)
(8V < VVS < 20V, VEN = HIGH, -40°C TJ 150°C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
Parameter
Test Condition
ICP Charging current
VCP= VVS + 8V
tCP Charging time 2)
VCP= VVS + 8V
fCP Charge pump frequency
Drivers for external highside power MOS
VVS = 13.5V
VVS = 13.5V
CCP = 10nF
VVS = 13.5V
VCB1
VCB2
Bootstrap voltage
RGH1L ON-resistance of SINK stage
RGH2L
VVS = 8V; ICBX = 0; VSX = 0
VVS =13.5V; ICBX = 0; VSX = 0
VVS = 20V; ICBX = 0; VSX = 0
VCBX = 8V; VSX = 0
IGHX = 50mA; TJ = 25°C
RGH1H
RGH2H
VGH1H
VGH2H
ON-resistance of SOURCE stage
Gate ON voltage (SOURCE)
RGH1
RGH2
Gate discharge resistance
RS1 Sink resistance
RS2
Drivers for external lowside power MOS
VCBX = 8V; VSX = 0
IGHX = 50mA; TJ = 125°C
IGHX = -50mA; TJ = 25°C
IGHX = -50mA; TJ = 125°C
VVS= VSX = 8V; IGHX = 0;
CCBX = 0.1F
VVS = VSX = 13.5V; IGHX = 0;
CCBX = 0.1F
VVS = VSX = 20V; IGHX = 0;
CCBX = 0.1F
EN = LOW
RGL1L ON-resistance of SINK stage
RGL2L
IGLX = 50mA; TJ = 25°C
IGLX = 50mA; TJ = 125°C
RGL1H, ON-resistance of SOURCE stage IGLX = -50mA; TJ = 25°C
RGL2H
IGLX = -50mA; TJ = 125°C
VGL1H, Gate ON voltage (SOURCE)
VGL2H
VVS = 8V; IGLX = 0
VVS = 13.5V; IGLX = 0
VVS = 20V; IGLX = 0
RGL1
RGL2
Gate discharge resistance
EN = LOW
2. not tested in production: guaranteed by design and verified in characterization
Timing of the drivers
tGH1LH Propagation delay time
tGH2LH
Fig. 2
VVS = 13.5V
VS1 = VS2 =0
CCBX = 0.1µF
Min.
-50
Typ.
-75
1.2
Max.
4
Unit
A
ms
250 500 750 kHz
7.5
14
V
10
14
V
10
14
V
10
20
10
20
VVS
+6.5V
VVS
+14V
VVS+
10V
VVS
+14V
VVS
+10V
VVS
+14V
10
100
k
10
100
k
10
20
10
20
7V
VVS
10V
VVS
10V
14V
10
100
k
500
ns
RPR= 10kW
6/17
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