STB80NF10 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

STB80NF10

N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Test circuits

3

Test circuits

STB80NF10, STP80NF10

Figure 13. Switching times test circuit for

resistive load

Figure 14. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

µF

D.U.T.

3.3

µF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

µF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 15. Test circuit for inductive load

Figure 16. Unclamped inductive load test

switching and diode recovery times

circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100µH

B

3.3

B

µF

D

G

RG

S

1000

µF

VDD

Vi

L

VD

2200

3.3

µF

µF

VDD

ID

D.U.T.

Pw

AM01470v1

Figure 17. Unclamped inductive waveform

Figure 18. Switching time waveform

AM01471v1

V(BR)DSS

VD

ton

tdon

tr

toff

tdoff tf

VDD

IDM

ID

0

VDD

90%

10% VDS

90%

VGS

90%

10%

AM01472v1

0

10%

AM01473v1

8/14

Doc ID 6958 Rev 18

Share Link: