STB95NF03 Ver la hoja de datos (PDF) - STMicroelectronics

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STB95NF03

N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STB95NF03

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

1

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS Drain-source

Breakdown Voltage

ID = 250 µA VGS = 0

30

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

°C/W

°C/W

°C

Max.

Unit

V

1

µA

10

µA

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

ID = 45 A

Min.

2

Typ. Max.

4

0.0065 0.0070

Unit

V

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15 V

ID =45 A

VDS = 25V f = 1 MHz VGS = 0

Min.

Typ.

50

2450

880

170

Max.

Unit

S

pF

pF

pF

2/9

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