D30NF03L Ver la hoja de datos (PDF) - STMicroelectronics
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D30NF03L Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
STD30NF03L - STD30NF03L-1
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
30
V
VDS = Max rating
VDS = Max rating,
TC = 125°C
1
µA
10
µA
VGS = ± 20V
±100 nA
VDS = VGS, ID = 250µA
1
1.7
2.5
V
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 15A
0.020 0.025 Ω
0.028 0.035 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 15A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 20A
RG = 4.7Ω VGS = 4.5V
(see Figure 12)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 24V, ID = 30A,
VGS = 5V, RG = 4.7Ω
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
13
S
830
pF
230
pF
92
pF
35
ns
205
ns
90
ns
240
ns
18
nC
7
nC
8
nC
4/14
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