STS2DNF30L(2002) Ver la hoja de datos (PDF) - STMicroelectronics
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STS2DNF30L Datasheet PDF : 8 Pages
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STS2DNF30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient
Tj
Thermal Operating Junction-ambient
Tstg
Storage Temperature
(*) Mounted on FR-4 board (t [ 10 sec.)
Single Operation
Dual Operating
62.5
78
150
-55 to 175
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 18V
Max.
1
10
±100
°C/W
°C/W
°C
°C
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 5 V
ID = 1 A
ID = 1 A
Min.
1
Typ.
1.7
0.09
0.13
Max.
2.5
0.011
0.15
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS>ID(on)xRDS(on)max ID=2.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2.5
121
45
11
Max.
Unit
S
pF
pF
pF
2/8
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