STS2DNFS30L Ver la hoja de datos (PDF) - STMicroelectronics
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STS2DNFS30L
STMicroelectronics
STS2DNFS30L Datasheet PDF : 6 Pages
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E1.LECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 1.5 A
RG = 4.7 Ω VGS = 4.5 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 24 V, ID = 3 A,
VGS = 4.5 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V, ID = 1.5 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs,
VDD = 30 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR(*)
Reversed Leakage Current TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
VF(*)
Forward Voltage Drop
TJ = 25 °C , IF = 1 A
TJ = 125 °C , IF = 1 A
STS2DNFS30L
Min. Typ. Max. Unit
19
ns
20
ns
4.5
6
nC
1.7
nC
0.9
nC
Min.
Typ.
12
8
Max.
Unit
ns
ns
Min.
Typ.
19
8.1
0.85
Max.
3
12
1.2
Unit
A
A
V
ns
nC
A
Min.
Typ.
1.5
0.37
Max.
10
10
0.55
0.46
Unit
µA
mA
V
V
3/6
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