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STB100NF04LT4

N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STB100NF04L

N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK

STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

STB100NF04L

40 V <0.0042Ω

s TYPICAL RDS(on) = 0.0036 Ω

s LOW THRESHOLD DRIVE

s 100% AVALANCHE TESTED

s LOGIC LEVEL DEVICE

ID

100 A

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SWITCHING SPEED

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

s SOLENOID AND RELAY DRIVERS

3

1

D2PAK

TO-263

(Suffix “T4”)

ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID(*)

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(*) Current Limited by package

February 2002

.

Value

40

40

± 16

100

70

400

300

2

3.6

1.4

-65 to 175

175

(1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, IAR = 50A, VDD= 30V

Unit

V

V

V

A

A

A

W

W/°C

V/ns

J

°C

°C

1/9

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