STB100NF04L Ver la hoja de datos (PDF) - STMicroelectronics

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STB100NF04L

N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STB100NF04L

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

0.5

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tj

Maximum Lead Temperature For Soldering Purpose

Typ

300

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

40

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

°C/W

°C/W

°C

Max.

1

10

±100

Unit

V

µA

µA

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 4.5 V

ID = 50 A

ID = 50 A

Min.

1

Typ. Max.

0.0036 0.0042

0.0040 0.0065

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15 V

ID = 20 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

50

6400

1300

190

Max.

Unit

S

pF

pF

pF

2/9

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