STB100NF04(2007) Ver la hoja de datos (PDF) - STMicroelectronics

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STB100NF04
(Rev.:2007)

N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB100NF04 - STP100NF04

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source Voltage (VGS=0)

VGS

ID(1)

ID (1)

IDM(2)

Gate-source Voltage

Drain-current (continuous) at Tc=25°C

Drain-current (continuous) at Tc=100°C

Drain-current (pulsed)

PTOT Total dissipation at Tc=25°C

Derating factor

dv/dt(3) Peak Diode Recovery voltage slope

EAS(4) Single Pulse Avalanche Energy

Tj

Operating Junction Temperature

Tstg Storage Temperature

1. Current limited by package

2. Pulse width limited by safe operating area.

3. ISD ≤120A, di/dt ≤300A/µs, VDD < V(BR)DSS. Tj < Tjmax

4. Starting Tj=25°C, ID=60A, VDD=30V

Value

40

±20

120

120

480

300

2

6

1.2

-55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

J

°C

Table 2. Thermal resistance

Symbol

Parameter

Rthj-case

Rthj-pcb

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-pcb Max

Thermal Resistance Junction-ambient (Free Air) Max

Maximum Lead Temperature For Soldering Purpose

Value

0.5

(see Figure 13)

62.5

300

Unit

°C/W

°C/W

°C/W

°C

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