STB100NF04T4(2016) Ver la hoja de datos (PDF) - STMicroelectronics

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STB100NF04T4
(Rev.:2016)

Automotive-grade N-channel 40 V, 4.3 mΩ typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220

STMicroelectronics 

STB100NF04T4, STP100NF04

Electrical ratings

1

Electrical ratings

Symbol

Table 2: Absolute maximum ratings

Parameter

Value

Unit

VDS

VGS

ID (1)

ID (1)

IDM (2)

PTOT

dv/dt(3)

EAS (4)

Tj

Tstg

Drain-source voltage

Gate- source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Peak diode recovery voltage slope

Single pulse avalanche energy

Operating junction temperature range

Storage temperature range

40

±20

120

120

480

300

6

1.2

- 55 to 175

V

V

A

A

A

W

V/ns

J

°C

Notes:

(1)Current limited by package

(2)Pulse width limited by safe operating area.

(3)ISD ≤120 A, di/dt ≤300A/μs, VDD =V(BR)DSS, Tj ≤ TJMAX

(4)Starting Tj = 25 °C, ID = 60 A, VDD = 30 V.

Symbol

Table 3: Thermal data

Parameter

Rthj-case

Rthj-pcb(1)

Rthj-amb

Thermal resistance junction-case

Thermal resistance junction-pcb

Thermal resistance junction-ambient

Notes:

(1)When mounted on a 1-inch² FR-4 board, 2oz Cu.

Value

D²PAK

TO-220

0.5

35

62.5

Unit

°C/W

°C/W

°C/W

DocID9969 Rev 7

3/20

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