STP22NM50 Ver la hoja de datos (PDF) - STMicroelectronics
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STP22NM50 Datasheet PDF : 10 Pages
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STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250 V, ID = 10 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400 V, ID = 20 A,
VGS = 10 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400 V, ID = 20 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
24
16
40
13
19
Max.
56
Unit
ns
ns
nC
nC
nC
Min.
Typ.
9
8.5
23
Max.
Unit
ns
ns
ns
Min.
Typ.
350
4.6
26
435
5.9
27
Max.
20
80
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
3/10
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