W14NM50(2002) Ver la hoja de datos (PDF) - STMicroelectronics
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W14NM50 Datasheet PDF : 5 Pages
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STW14NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl
Maximum Lead Temperature For Soldering Purpose
0.715
30
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
12
400
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6A
Min.
3
Typ.
4
0.3
Max.
5
0.35
Unit
V
Ω
DYNAMIC
Symbol
Parameter
gfs (1)
Forward Transconductance
Ciss
Coss
Crss
Coss eq. (1)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
RG
Gate Input Resistance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 6A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 400V
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Typ.
5.2
1000
180
25
90
1.6
Max.
Unit
S
pF
pF
pF
pF
Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
2/5
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