IRFP450 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

IRFP450

N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET

STMicroelectronics 

®

IRFP450

N - CHANNEL 500V - 0.33Ω - 14A - TO-247

PowerMESH™ MOSFET

TYPE

V DSS

RDS(on)

ID

IRFP450

500 V < 0.4 Ω

14 A

s TYPICAL RDS(on) = 0.33 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s HIGH CURRENT SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gate Voltage (RGS = 20 kΩ)

VGS Gat e-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM ( •)

Ptot

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Value

Uni t

500

V

500

V

± 20

V

14

A

8.7

A

56

A

190

W

1.5

W/oC

3.5

-65 to 150

150

(1) ISD ≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ ns

oC

oC

August 1998

1/8

Share Link: