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IRF830

N - CHANNEL 500V - 1.35Ω- 4.5A - TO-220 PowerMESH™ MOSFET

STMicroelectronics 

®

IRF830

N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220

PowerMESH™ MOSFET

TYPE

V DSS

RDS(on)

ID

IRF830

500 V

< 1.5 Ω

4.5 A

s TYPICAL RDS(on) = 1.35 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

VDS Drain-source Voltage (VGS = 0)

500

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

500

± 20

4.5

2.9

IDM(•) Drain Current (pulsed)

18

Ptot Tot al Dissipation at Tc = 25 oC

100

Derating Factor

0.8

dv/dt(1) Peak Diode Recovery voltage slope

3.5

Tstg Storage Temperature

-65 to 150

Tj

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) ISD ≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

Uni t

V

V

V

A

A

A

W

W/oC

V/ ns

oC

oC

August 1998

1/8

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