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STD2NC50

N-CHANNEL 500V - 3Ω - 2.2A DPAK/IPAK PowerMesh™II MOSFET

STMicroelectronics 

STD2NC50

STD2NC50-1

N-CHANNEL 500V - 3Ω - 2.2A DPAK/IPAK

PowerMesh™II MOSFET

TYPE

VDSS

RDS(on)

ID

STD2NC50

STD2NC50-1

500 V

500 V

<4Ω

<4Ω

2.2 A

2.2 A

s TYPICAL RDS(on) = 3 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK

s GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

3

1

DPAK

3

2

1

IPAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

VGS

ID

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 kΩ)

Gate- source Voltage

Drain Current (continuos) at TC = 25°C

ID

IDM (1)

Drain Current (continuos) at TC = 100°C

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt

Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

May 2001

Value

Unit

500

V

500

V

±30

V

2.2

A

1.4

A

8.8

A

45

W

0.36

W/°C

3

V/ns

–60 to 150

°C

150

°C

(1)ISD ≤ 2.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/10

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