STB80NF55L-06 Ver la hoja de datos (PDF) - STMicroelectronics

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Lista de partido

STB80NF55L-06

N-CHANNEL 55V - 0.005 Ω - 80A D²PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STB80NF55L-06 STP80NF55L-06

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

0.5

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

55

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 5 V

ID = 40 A

ID = 40 A

Min.

1

Typ. Max.

0.005 0.0065

0.0055 0.008

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15 V

ID = 40 A

VDS = 25V f = 1 MHz VGS = 0

Min.

Typ.

150

4850

1040

375

Max.

Unit

S

pF

pF

pF

2/10

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