STB80NF55-06T4 Ver la hoja de datos (PDF) - STMicroelectronics
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STB80NF55-06T4
STMicroelectronics
STB80NF55-06T4 Datasheet PDF : 11 Pages
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STB80NF55-06 STP80NF55-06 STP80NF55-06FP
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
D2PAK/TO-220 TO-220FP
Max
0.5
3.33 °C/W
Max
62.5
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
55
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 40 A
Min.
2
Typ.
3
0.005
Max.
4
0.0065
Unit
V
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 40 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
150
4400
1020
350
Max.
Unit
S
pF
pF
pF
2/11
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