W150NF55(2002) Ver la hoja de datos (PDF) - STMicroelectronics
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W150NF55
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
W150NF55 Datasheet PDF : 14 Pages
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STB150NF55 STP150NF55
STW150NF55
N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
VDSS
RDS(on)
ID
STB150NF55
STP150NF55
STP150NF55
55 V
55 V
55 V
<0.006 Ω
<0.006 Ω
<0.006 Ω
120 A(**)
120 A(**)
120 A(**)
s TYPICAL RDS(on) = 0.005 Ω
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
3
1
D2PAK
TO-263
(Suffix “T4”)
TO-247
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D2PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(**)
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
Value
55
55
± 20
120
106
480
300
2.0
8
850
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
1/14
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