STB85NF55 Ver la hoja de datos (PDF) - STMicroelectronics
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STB85NF55 Datasheet PDF : 10 Pages
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STB85NF55
STP85NF55
N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB85NF55
STP85NF55
55 V
55 V
<0.008 Ω
<0.008 Ω
80 A
80 A
s TYPICAL RDS(on) = 0.0062 Ω
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Current Limited by Package
(••) Pulse width limited by safe operating area
January 2003
Value
55
55
± 20
80
80
320
300
2.0
10
980
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1)ISD ≤80A, di/dt ≤300A/µs,
(2) Starting Tj = 25 oC ID =
VDD
40A
≤
V(BR)DSS, Tj
VDD = 25V
≤
TJMAX.
1/10
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