B80NF55-08 Ver la hoja de datos (PDF) - STMicroelectronics

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B80NF55-08

N-CHANNEL 55V - 0.0065 Ω- 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STP80NF55-08 - STB80NF55-08 - STW80NF55-08

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test conditions

VDD = 27 V, ID = 40 A

RG = 4.7 Ω VGS = 10 V

(see Figure 13)

Min. Typ. Max. Unit

20

ns

110

ns

75

ns

35

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD

trr(2)

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A, VGS = 0

ISD = 80 A,VDD = 25 V

di/dt=100 A/µs,

Tj =150 °C

(see Figure 18)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min Typ. Max Unit

80 A

320 A

1.5 V

80

ns

230

nC

5.7

A

5/15

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