STW80NF55-06 Ver la hoja de datos (PDF) - STMicroelectronics
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STW80NF55-06 Datasheet PDF : 6 Pages
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STW80NF55-06
N-CHANNEL 55V - 0.005Ω - 80A TO-247
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STW80NF55-06
55 V < 0.0065 Ω 80 A
s TYPICAL RDS(on) = 0.005Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
2
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s DC-AC & DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID (*)
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
October 2001
Value
55
55
±20
80
80
320
300
2
1
– 55 to 175
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Current Limited by wire bonding
Unit
V
V
V
A
A
A
W
W/°C
J
°C
1/6
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