STW13NB60 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Lista de partido

STW13NB60

N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET

STMicroelectronics 

STW13NB60

®

STH13NB60FI

N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

ST W13 NB6 0

ST H13 NB6 0FI

600 V

600 V

<0.54 Ω

<0.54 Ω

13 A

8.6 A

s TYPICAL RDS(on) = 0.48 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-247

3

2

1

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM (•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

VISO I nsulat ion W ithstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Value

Un it

STW13NB60 STH13NB60FP

600

V

600

V

± 30

V

13

8.6

A

8.2

5.4

A

52

52

A

190

1.52

80

0.64

W

W /o C

4

4

V/ns



2000

V

-65 to 150

oC

150

oC

( 1) ISD ≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

January 2000

1/9

Share Link: