STW10NC60 Ver la hoja de datos (PDF) - STMicroelectronics
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STW10NC60 Datasheet PDF : 9 Pages
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STW10NC60 / STH10NC60FI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 300V, ID = 4.5 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 9.0 A,
VGS = 10V
Min.
Typ.
20
16
55
4.5
31
Max. Unit
ns
ns
77
nC
nC
nC
Test Conditions
VDD = 300 V, ID = 4.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 480V, ID = 9.0 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
64
32
19
13
32
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 9 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 9 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
600
4.7
15.5
Max. Unit
10
A
40
A
1.6
V
ns
µC
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
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