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IRFBC40

N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET

STMicroelectronics 

®

IRFBC40

N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220

PowerMESH™ MOSFET

TYPE

V DSS

RDS(on)

ID

IRFBC40

600 V

< 1.2 Ω

6.2 A

s TYPICAL RDS(on) = 1.0 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gate Voltage (RGS = 20 kΩ)

VGS Gat e-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM ( •)

Ptot

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Value

600

600

± 20

2

3.9

25

125

1.0

3

-65 to 150

150

(1) ISD ≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Uni t

V

V

V

A

A

A

W

W/oC

V/ ns

oC

oC

August 1998

1/8

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