STB8NC70ZT4 Ver la hoja de datos (PDF) - STMicroelectronics
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STB8NC70ZT4
STMicroelectronics
STB8NC70ZT4 Datasheet PDF : 13 Pages
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STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 350 V, ID = 37.5 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 560V, ID = 7.5 A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 560V, ID = 7.5 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
30
10
55
14
21
Max.
77
Unit
ns
ns
nC
nC
nC
Min.
Typ.
15
12
20
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 6.8 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7.5 A, di/dt = 100A/µs,
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
680
7.1
21
Max.
6.8
27
1.6
Unit
A
A
V
ns
µC
A
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
αT
Voltage Thermal Coefficient
Rz
Dynamic Resistance
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
ID = 50 mA,
Min.
25
Typ.
1.3
90
Max. Unit
V
10-4/°C
Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
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