STW5NB90 Ver la hoja de datos (PDF) - STMicroelectronics
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STW5NB90 Datasheet PDF : 8 Pages
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STW5NB90
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 450 V ID = 2.5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 720 V ID =5 A VGS = 10 V
RG = 4.7 Ω
VGS = 10 V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V ID = 5 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 5 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 5 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
18
9
Max.
Unit
ns
ns
33
47
nC
10
nC
13
nC
Min.
T yp.
13
10
17
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
5.6
22.4
Unit
A
A
1.6
V
700
ns
5.4
µC
15.5
A
Safe Operating Area
Thermal Impedance
3/8
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