IRF7103QTR Ver la hoja de datos (PDF) - International Rectifier
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IRF7103QTR Datasheet PDF : 10 Pages
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IRF7103Q
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
50 ––– –––
––– 0.057 –––
––– ––– 130
––– ––– 200
V
V/°C
mΩ
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A R
VGS = 4.5V, ID = 1.5A R
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
3.4 ––– ––– S VDS = 15V, ID = 3.0A
––– ––– 2.0
––– ––– 25
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 10 15
ID = 2.0A
––– 1.2 ––– nC VDS = 40V
––– 2.8 –––
––– 5.1 –––
VGS = 10V
VDD = 25V R
––– 1.7 ––– ns ID = 1.0A
––– 15 –––
RG = 6.0Ω
––– 2.3 –––
RD = 25Ω
––– 255 –––
VGS = 0V
––– 69 ––– pF VDS = 25V
––– 29 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Q
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
35
45
Max.
3.0
12
1.2
53
67
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 1.5A, VGS = 0VR
TJ = 25°C, IF = 1.5A
di/dt = 100A/µs R
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature.
R Pulse width ≤ 400µs; duty cycle ≤ 2%.
S Surface mounted on 1 in square Cu board
T Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 3.0A. (See Figure 12).
U ISD ≤ 2.0A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
V Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2
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