F7103 Ver la hoja de datos (PDF) - International Rectifier

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F7103

HEXFET® Power MOSFET

International Rectifier 

IRF7103

VDS

VGS

RG

RD

D.U.T.

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+

-

VDD

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

10

0.10

0.05

0.02

1

0.01

SINGLE PULSE

(THERMAL RESPONSE)

PDM

t1

t2

0.1

0.0001

0.001

Notes:

1. Duty factor D = t 1/ t 2

2. Peak T J = P DM x Z thJA + TA

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

10

100

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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