TGF4112 Ver la hoja de datos (PDF) - TriQuint Semiconductor

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TGF4112

12 mm Discrete HFET

TriQuint Semiconductor 

Mechanical Drawing of TGF4112-EPU

81.0

(2.057)

59.9

(1.520)

48.8

(1.239)

32.2

(0.819)

15.7

(0.399)

4.7

(0.119)

0.0

Alternate gate pad

0.0

7.4

(0.187)

)

52.5

(1.333)

45.1

(1.145)

35.9

(0.913)

28.5

(0.725)

19.4

(0.493)

12.0

(0.305)

23.8

(0.605)

36.0

(0.914)

Alternate drain pad

Units: mils (mm)

Thickness: 4.0 (0.102)

Gate pad sizes are 4.0 x 4.0 (0.10 x 0.10)

Drain pad sizes are 4.7 x 14.5 (0.12 x 0.37)

A minimum of three gate bonds and six drain bonds

is recommended for operation. Sources are

connected to backside metalization. Alternate gate

and drain pads are located on either end of the

FET for paralleling TGF4112-EPUs.

TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504

8

Web: www.triquint.com

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