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Numonyx -> Micron
Numonyx -> Micron
componentes Descripción : 256 Mbit (x16, Multiple Bank, MultiLevel, Burst) Flash Memory 128 Mbit (burst) PSRAM, 1.8 V supply, MultiChip Package
componentes Descripción : 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
componentes Descripción : 16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory
componentes Descripción : 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
componentes Descripción : 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
Número de pieza(s) : LRS1329
Sharp Electronics
Sharp Electronics
componentes Descripción : Stacked Chip 16M Flash and 2M SRAM
componentes Descripción : 2.7~3.6-volt single Bank CMOS Flash Memory
Número de pieza(s) : W19B320BT W19B320BB
Winbond
Winbond
componentes Descripción : 2.7~3.6-volt single Bank CMOS Flash Memory (Rev - 2008)
componentes Descripción : 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
componentes Descripción : 256Mb B-die Page NOR Flash
componentes Descripción : 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
componentes Descripción : 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
componentes Descripción : Multi-Purpose Flash Plus + SRAM ComboMemory
componentes Descripción : Multi-Purpose Flash Plus + SRAM ComboMemory
componentes Descripción : 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product
componentes Descripción : 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
componentes Descripción : 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
componentes Descripción : 32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product
Integrated Silicon Solution
Integrated Silicon Solution
componentes Descripción : 3.0 Volt Multi-Chip Package (MCP) — 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
Número de pieza(s) : HY29DS322 HY29DS323
Hynix Semiconductor
Hynix Semiconductor
componentes Descripción : 32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
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