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Número de pieza(s) : BULD125KC
Transys-Electronics
Transys Electronics Limited
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Número de pieza(s) : BULD125KC
POINN
Power Innovations Ltd
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Número de pieza(s) : BULD85 BULD85KC
POINN
Power Innovations Ltd
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

 

Número de pieza(s) : BULD125KC
TRSYS
Transys Electronics Limited
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Número de pieza(s) : BULD85 BULD85KC
Power-Innovations
Power Innovations
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

 

Número de pieza(s) : BULD85KC
Transys-Electronics
Transys Electronics Limited
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

 

Número de pieza(s) : BULD125 BULD125KC
Power-Innovations
Power Innovations
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Número de pieza(s) : BULD125KC BULD125
Transys
Transys Electronics
componentes Descripción : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of Switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a Voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Número de pieza(s) : CA3141E CA3141
Intersil
Intersil
componentes Descripción : High-Voltage Diode Array For Commercial, Industrial and Military Applications

Description
The CA3141E High Voltage Diode Array Consists of ten general purpose High reverse breakdown Diodes. Six Diodes are internally connected to form three common cathode Diode pairs, and the remaining four Diodes are internally connected to form two common anode Diode pairs. Integrated circuit construction assures excellent static and dynamic matching of the Diodes, making the CA3141 extremely useful for a wide variety of applications in communications and Switching systems.

Features
• Matched Monolithic Construction
    - VF Match (Each Diode Pair). . . . 0.55mV At IF = 1mA
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at VR = 2V
High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)

Applications
• Balanced Modulators or Demodulators
• Analog Switches
High-Voltage Diode Gates
• Current Ratio Detectors

Número de pieza(s) : CA3141E CA3141
Harris
Harris Semiconductor
componentes Descripción : High-Voltage Diode Array For Commercial, Industrial and Military Applications

Description
The CA3141E High Voltage Diode Array Consists of ten general purpose High reverse breakdown Diodes. Six Diodes are internally connected to form three common cathode Diode pairs, and the remaining four Diodes are internally connected to form two common anode Diode pairs. Integrated circuit construction assures excellent static and dynamic matching of the Diodes, making the CA3141 extremely useful for a wide variety of applications in communications and Switching systems.

Features
• Matched Monolithic Construction
    - VF Match (Each Diode Pair). . . . 0.55mV At IF = 1mA
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at VR = 2V
High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)

Applications
• Balanced Modulators or Demodulators
• Analog Switches
High-Voltage Diode Gates
• Current Ratio Detectors

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