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M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solutions, Inc.
componentes Descripción : LDMOS Pulsed power transistor 75W, 978 MHz, 400µs Pulse, 1% Duty

Features
• Gold LDMOS microwave power transistor
• Common source configuration
• Broadband Class AB operation
• RoHS Compliant
avionics applications specifically designed for Internal input and output impedance matching.
• Integrated ESD Protection
• RoHS Compliant

Número de pieza(s) : BLA6H0912L-1000 BLA6H0912LS-1000
Ampleon
Ampleon
componentes Descripción : LDMOS avionics power transistor

General description
1000W LDMOS pulsed power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Features and benefits
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (960 MHz to 1215 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ 1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME
   and TACAN applications in the 960 MHz to 1215 MHz frequency range

Número de pieza(s) : BLA0912-250R
Ampleon
Ampleon
componentes Descripción : avionics LDMOS power transistor

General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

Features and benefits
■ High power gain
■ Easy power control
■ Excellent ruggedness
■ Source on mounting base eliminates DC isolators, reducing common mode
   inductance.

Applications
avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
   as Mode-S, TCAS and JTIDS, DME or TACAN.

Número de pieza(s) : BLA6H0912L-1000 BLA6H0912LS-1000
NXP Semiconductors.
NXP Semiconductors.
componentes Descripción : LDMOS avionics power transistor

General description
1000W LDMOS pulsed power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Features and benefits
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (960 MHz to 1215 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ 1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME
   and TACAN applications in the 960 MHz to 1215 MHz frequency range

Número de pieza(s) : BLA6H1011-600
NXP Semiconductors.
NXP Semiconductors.
componentes Descripción : LDMOS avionics power transistor

General description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Features and benefits
■ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
   voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %:
   ◆ Output power = 600 W
   ◆ power gain = 17 dB
   ◆ Efficiency = 52 %
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1030 MHz to 1090 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
   (RoHS)

Applications
■ 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
   1030 MHz to 1090 MHz frequency range

Número de pieza(s) : BLA0912-250R
NXP Semiconductors.
NXP Semiconductors.
componentes Descripción : avionics LDMOS power transistor

General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

Features and benefits
■ High power gain
■ Easy power control
■ Excellent ruggedness
■ Source on mounting base eliminates DC isolators, reducing common mode
   inductance.

Applications
avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
   as Mode-S, TCAS and JTIDS, DME or TACAN.

Número de pieza(s) : BLA6H1011-600
Ampleon
Ampleon
componentes Descripción : LDMOS avionics power transistor

General description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Features and benefits
■ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
   voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %:
   ◆ Output power = 600 W
   ◆ power gain = 17 dB
   ◆ Efficiency = 52 %
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1030 MHz to 1090 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
   (RoHS)

Applications
■ 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
   1030 MHz to 1090 MHz frequency range

Número de pieza(s) : BLA1011-200 BLA1011S-200
Philips Electronics
Philips Electronics
componentes Descripción : avionics LDMOS transistor

General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

Features
■ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
   supply voltage of 36 V and an IDq of 150 mA:
   ◆ Load power ≥ 200 W
   ◆ Gain ≥ 13 dB
   ◆ Efficiency ≥ 45 %
   ◆ Rise time ≤ 50 ns
   ◆ Fall time ≤ 50 ns
■ High power gain
■ Easy power control
■ Excellent ruggedness
■ Source on mounting flange eliminates DC isolators, reducing common mode
   inductance

Applications
avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.

componentes Descripción : power LDMOS transistor

General description
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Features and benefits
■ Easy power control
■ Integrated ESD protection
■ Enhanced ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1030 MHz to 1090 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range

Número de pieza(s) : BLA1011-200 BLA1011S-200
Ampleon
Ampleon
componentes Descripción : avionics LDMOS transistor

General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

Features
■ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
   supply voltage of 36 V and an IDq of 150 mA:
   ◆ Load power ≥ 200 W
   ◆ Gain ≥ 13 dB
   ◆ Efficiency ≥ 45 %
   ◆ Rise time ≤ 50 ns
   ◆ Fall time ≤50 ns
■ High power gain
■ Easy power control
■ Excellent ruggedness
■ Source on mounting flange eliminates DC isolators, reducing common mode
   inductance

Applications
avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.

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