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Consulta
componentes Descripción : SAW Based Clock Oscillator

Description
The SO-720 is a SAW Based Clock Oscillator that achieves low phase noise and very low jitter performance. The SO-720 is housed in an industry standard 6-Pad leadless ceramic package that is hermetically sealed. Packaging options include bulk or tape and reel.

Features
• Industry Standard Package,5.0 x 7.5 x 2.0 mm
• ASIC Technology For Ultra Low Jitter
  0.100 ps-rms typical across 12 kHz to 20 MHz BW
  0.120 ps-rms typical across 50 kHz to 80 MHz BW
• Output Frequencies from 150 MHz to 800 MHz
• 3.3 V Operation
• LV-PECL or LVDS Configuration with Fast Transition Times
• Complementary Outputs
• Output Disable Feature
• Improved Temperature Stability over Standard SAW XO

Mini-circuits
Minicircuits
componentes Descripción : Coaxial High Power Amplifier

Coaxial High Power Amplifier
50Ω  100W  20 to 500 MHz

Product Overview
The Mini-Circuits ZHL-100W-GaN+ utilizes high power Galium Nitride (GaN) output stage, which results in higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. GaN FET’s boast a
maximum junction temperature of 250° C translating into higher operating temperatures without adversely affecting the MTBF.

The Big Deal
•  High Efficiency, 50% typ.
•  High Output Power, 100W
•  GaN Output Stage
•  High Output IP2, +84 dBm typ.
•  High Output IP3, +60 dBm typ.

Número de pieza(s) : KLM-821G
Kodenshi
Kodenshi Auk Co., LTD
componentes Descripción : Light Emitting Diode(GaN)

Light Emitting Diode(GaN)

KLM-821G has a 1W High power GaN green LED and has the optimized optical characteristics.

Features
• Low forward voltage operated
• More Energy Efficient than incandescent and
   most halogen lampes

Applications
• Portable flashLight
• Bollards,Security,Garden Lighting
• LCD Back Light
• General Lighting

componentes Descripción : 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER

Product Description
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Features
■ Advanced GaN HEMT Technology
■ Output Power of 9W
■ Advanced Heat-Sink Technology
■ 30MHz to 2500MHz
   Instantaneous Bandwidth
■ Input Internally Matched to 50
■ 28V Operation Typical
   Performance
   ■ POUT 39.5dBm
   ■ Gain 12dB
   ■ Power Added Efficiency 45%
      (30MHz to 2500MHz)
   ■ Power Added Efficiency 50%
      (200MHz to 1800MHz)
■ -40°C to 85°C Operating
   Temperature
■ Large Signal Models Available

Applications
■ Class AB Operation for Public
   Mobile Radio
■ Power Amplifier Stage for
   Commercial Wireless
   Infrastructure
■ General Purpose Tx Amplification
■ Test and Instrumentation
■ Civilian and Military Radar

componentes Descripción : 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER

Product Description
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Features
■ Advanced GaN HEMT Technology
■ Output Power of 15W
■ Advanced Heat-Sink Technology
■ 50MHz to 1000MHz Instantaneous Bandwidth
■ Input Internally Matched to 50
■ 28V Operation Typical Performance
■ Output Power 41.5dBm
■ Gain 17dB
■ Power Added Efficiency 60%
■ -40°C to 85°C Operating Temperature
■ Large Signal Models Available

Applications
■ Class AB Operation for Public Mobile Radio
■ Power Amplifier Stage for Commercial Wireless Infrastructure
■ General Purpose Tx Amplification
■ Test Instrumentation
■ Civilian and Military Radar

Número de pieza(s) : CGH60120D
ETC
Unspecified
componentes Descripción : 120 W, 6.0 GHz, GaN HEMT Die

[Cree, Inc.]

Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

FEATURES
• 13 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 120 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Effciency

APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

Número de pieza(s) : CGH60120D
Cree
Cree, Inc
componentes Descripción : 120 W, 6.0 GHz, GaN HEMT Die

Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

FEATURES
• 13 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 120 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Effciency

APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

componentes Descripción : GaN EiceDRIVER™ product family

Description
CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycle dependence of switching dynamics and the lack of negative gate drive in specific situations.
Infineons GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable a zero “off" level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage not compatible with bootstrapping.

Features
• Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products)
   – low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
   – resistor programmable gate current (typ. 10 mA) in steady “on” state
   – programmable negative gate voltage to completely avoid spurious turn-on
• Single output supply voltage (typ. 8 V, floating)
• Switching behavior independent of duty-cycle (2 "off" voltage levels)
• Differential concept to ensure negative gate drive voltage under any condition
• Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns)
• Galvanic input-to-output isolation based on coreless transformer (CT) technology
• Common mode transient immunity (CMTI) > 200 V/ns
• 3 package versions
   – 1EDF5673K: 13-pin LGA (5 x 5 mm, PG-TFLGA-13-1) for functional isolation (1.5 kV)
   – 1EDF5673F: 16-pin P-DSO (150 mil, PG-DSO-16-11) for functional isolation (1.5 kV)
   – 1EDS5663H: 16-pin P-DSO (300 mil, PG-DSO-16-30) for safe isolation (6 kV)
• Fully qualified according to JEDEC for Industrial Applications

NTE-Electronic
NTE Electronics
componentes Descripción : Light Emitting Diode (LED)

Description:
The NTE3020 through NTE3024 LEDs offer a variety of lens effects and color availability. The Red (NTE3020) source color device is made with Gallium Arsenide Phosphide on Gallium Arsenide Red Light Emitting Diode. The High Efficiency Red (NTE3022) and Orange (NTE3023) source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
The Green (NTE3024) source color device device is made with Gallium Phosphide on Gallium Phosphide Green Light Emitting Diode. The Yellow (NTE3021) source color device is made with Gallium Arside Phosphide on Gallium Phosphide Yellow Light Emitting Diode.

Features:
• Low Power Consumption
• High Efficiency
• IC Compatible/Low Current Requirements
• Versatile mounting on P.C. board or panel
• Reliable and Rugged

 

Número de pieza(s) : L-1043
Kingbright
Kingbright
componentes Descripción : 3.65x6.15mm SINGLE CHIP LED Light BARS

Description
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
The Green and Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode.
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.

Features
● FLAT RECTANGULAR Light Emitting SURFACE.
● IDEAL AS FLUSH MOUNTED PANEL INDICATORS.
● EXCELLENT ON/OFF CONTRAST.
● LONG LIFE - SOLID STATE RELIABILITY.

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