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componentes Descripción : Radiation Hardened Ultra High Frequency NPN/PNP transistor Arrays

Radiation Hardened Ultra High Frequency NPN/PNP transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a common substrate. The ISL73128RH consists of five PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
   - Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
   - SEL Immune . . Bonded Wafer Dielectric Isolation
NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
• PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between transistors

Applications
• High Frequency Amplifiers and Mixers
   - Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector

componentes Descripción : Low-Noise Matched transistor Array ICs

Description
The THAT 300, 320 and 340 are large geometry, 4-transistor, monolithic NPN and/or PNP arrays. They exhibit both high speed and low noise, with excellent parameter matching between transistors of the same gender. Typical base-spreading resistance is 25 Ω for the PNP devices (30 Ω for the low-gain NPNs), so their resulting voltage noise is under 1 nV/√Hz. This makes the 300 series ideally suited for low-noise amplifier input stages, log amplifiers, and many other applications. The four-NPN transistor array is available in versions selected for hfe with minimums of 150 (300A) or 300 (300B).

FEATURES
• 4 Matched NPN transistors
    º 300 typical hfe of 100
    º 300A minimum hfe of 150
    º 300B minimum hfe of 300
• 4 Matched PNP transistors
    º 320 typical hfe of 75
• 2 Matched PNP and 2 Matched NPN transistors
    º 340 PNP typical hfe of 75
    º 340 NPN typical hfe of 100
• Low Voltage Noise
    º 0.75 nV/ √Hz (PNP)
    º 0.8 nV/ √Hz (NPN)
• High Speed
    º fT = 350 MHz (NPN)
    º fT = 325 MHz (PNP)
• 500 μV matching between devices
• Dielectrically Isolated for low crosstalk and high DC isolation
• 36V VCEO

APPLICATIONS
• Low Noise Front Ends
• Microphone Preamplifiers
• Log/Antilog Amplifiers
• Current Sources
• Current Mirrors
• Multipliers

Número de pieza(s) : 8H02 TPCP8H02 8H02 TPCP8H02
Toshiba
Toshiba
componentes Descripción : TOSHIBA Multi-Chip transistor Silicon NPN Epitaxial Type, Field Effect transistor Silicon N Channel MOS Type

STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS

• Multi-chip discrete device; built-in NPN transistor for main switch and
   N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
   (NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)

Número de pieza(s) : 8H01 TPCP8H01
Toshiba
Toshiba
componentes Descripción : Silicon NPN Epitaxial Type, Field Effect transistor Silicon N Channel MOS Type Multi-Chip transistor

HIGH-SPEED SWITCHING APPLICATIONS
LORD SWITCHING APPLICATIONS
STROBE FLASH APPLICATIONS

• Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max)
                                                      (NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)

componentes Descripción : Ultra High Frequency transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
NPN transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

componentes Descripción : Ultra High Frequency transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130
NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V
• Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays
• Pb-Free (RoHS Compliant)

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

componentes Descripción : Ultra High Frequency Matched Pair transistors

The HFA3134 and HFA3135 are Ultra High Frequency transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications.
   
Features
NPN transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz
NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . .100
NPN Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . 2.6dB
• PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . .57
• PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB
• Small Package (EIAJ-SC74 Compliant) . . . . . . . SOT23-6
   
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
   

Renesas
Renesas Electronics
componentes Descripción : Ultra High Frequency Matched Pair transistors

The HFA3134 and HFA3135 are Ultra High Frequency transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications.
   
Features
NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz
NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100
NPN Noise Figure (50) at 1.0GHz. . . . . . . . . . . . . 2.6dB
• PNP transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 57
• PNP Noise Figure (50) at 900MHz . . . . . . . . . . . . 4.6dB
• Small Package (EIAJ-SC74 Compliant). . . . . . . .SOT23-6
• Pb-Free Plus Anneal Available (RoHS Compliant)
   
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
   

Número de pieza(s) : 2N5659 SFT6200
ETC
Unspecified
componentes Descripción : 10 AMP HIGH SPEED NPN transistor 120 VOLTS

[SSDI]

10 AMP HIGH SPEED NPN transistor 120 VOLTS

10 AMP HIGH SPEED NPN transistor 100 VOLTS

10 AMP RADIATION TOLLERANT NPN transistor 150 VOLTS

componentes Descripción : 50 V, 200 mA NPN general-purpose transistor/100 mA NPN resistor-equipped transistor

General description
NPN general-purpose transistor and NPN Resistor-Equipped transistor (RET) in one SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.

Features
■ General-purpose transistor:
   ♦ 200 mA collector current IC
■ Resistor-equipped transistor:
   ♦ Built-in bias resistors
■ Simplifies circuit design
■ Reduces component count
■ Reduces pick and place costs
■ Very small SMD plastic package
■ AEC-Q101 qualified

Applications
■ Inverter and switches
■ Low-frequency amplifier
■ Driver stages

 

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