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componentes Descripción : P2 Relay V23079

Standard telecom Relay (ringing and test access)
Slim line 15x7.5mm (.590x.295”)
Max. switching current 5A
2 form C bifurcated contacts (2 changeover contacts, 2 CO)
Immersion cleanable
High sensitivity for low power consumption 140mW/ 70mW
Single coil version with surge voltage resistance between contact and coil: 2.5kV (2/10μs) meets the Telcordia Requirement GR-1089, 1.5kV (10/160μs) meets FCC Part 68

Typical applications
Communications equipment linecard application (ringing and test access), PABX, voice over IP, office equipment, measurement and control equipment, automotive equipment as CAN bus, keyless entry, speaker switch, medical equipment, consumer electronics, set top boxes, HiFi

componentes Descripción : Telecom-, Signal and RF Relays

2 pole telecom Relay, polarized,
Through Hole Type (THT) or
Surface Mount Technology (SMT),
Relay types:  non-latching with 1 coil
latching with 2 coils
latching with 1 coil

Features
•  Standard telecom Relay (ringing and test access)
•  Slim line 15 x 7.5 mm, 0.590 x 0.295 inch
•  Switching current 5 A
•  2 changeover contacts (2 form C / DPDT)
•  Bifurcated contacts
•  Immersion cleanable
•  High sensitivity results in low nominal power consumption 140 mW for non-latching and latching with 2 coils 70 mW for latching with 1 coil
•  For single coil version:
•  Surge voltage resistance between contact and coil for single coil version:
•  2.5 kV (2 / 10 µs) meets the Telcordia Requirement GR-1089
•  1.5 kV (10 / 160 µs) meets FCC Part 68

componentes Descripción : Signal Relays

Signal Relays

■ Standard telecom Relay (ringing and test access)
■ Slim line 15x7.5mm (.590x.295”)
■ Max. switching current 5A
■ 2 form C bifurcated contacts (2 changeover contacts, 2 CO)
■ Immersion cleanable
■ High sensitivity for low power consumption 140mW/ 70mW
■ Single coil version with surge voltage resistance between contact and coil: 2.5kV (2/10μs) meets the Telcordia Requirement GR-1089, 1.5kV (10/160μs) meets FCC Part 68

Typical applications
    Communications equipment linecard application (ringing and test access), PABX, voice over IP, offce equipment, measurement and control equipment, automotive equipment as CAN bus, keyless entry, speaker switch, medical equipment, consumer electronics, set top boxes, HiFi

componentes Descripción : 7004 Series - Network Interface Device

Bourns® Model 7004 NID provides a secure and weather-resistant enclosure for Telco service for residential or commercial installations. The Model 7004 supplies station protection and test access points and can be configured for a maximum of four POTS lines or three lines with DSL. The Model 7004 features convenient cable knockouts and generous working space for wire management.

Features
Expands to add POTS lines, DSL or both
Manufactured from high-impact resistant, ultraviolet desensitized, flame retardant, UL Recognized plastic
Optional sealed switching jacks with Insulation Displacement Connectors (IDCs)
Subscriber lockable with Telco override
Convenient ground attachment

componentes Descripción : MINIATURE Relay 1 POLE—1 to 2 A (FOR SIGNAL SWITCHING)

FEATURES
● 2 A maximum carrying current Capable of 2 A maximum continuous carrying current in the contact
● Superior reliability gold-overlay contacts P type: Gold-overlay silver-palladium contacts
● International terminal pitch of one inch grid terminal layout
● High sensitivity, low power dissipation types also available Standard types: 0.45 W (A or B type) High sensitivity types: 0.2 W (C or E type)
● Conforms to FCC 68.302 (high dielectric strength type)
● UL recognized (File number E63615)
● CSA recognized (File number LR64026)
● RoHS compliant since date code: 0433A Please see page 5 for more information

componentes Descripción : 1 Megabit (128K x 8) Page Mode EEPROM

PRODUCT DESCRIPTION
The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The 29EE010/29LE010/29VE010 write with a single power supply.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for the 29EE010
    – 3.0V-only for the 29LE010
    – 2.7V-only for the 29VE010
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 1024 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 5 sec (typical)
    – Effective Byte-write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 90 and 120 ns
    – 3.0V-only operation: 150 and 200 ns
    – 2.7V-only operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal Vpp Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EEPROM Pinouts
• Packages Available
    – 32-Pin TSOP (8x20 & 8x14 mm)
    – 32-Lead PLCC
    – 32 Pin Plastic DIP

componentes Descripción : 1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION
The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/29VE010A conform to JEDEC standard pinouts for bytewide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for the SST29EE010A
    – 3.0-3.6V for the SST29LE010A
    – 2.7-3.6V for the SST29VE010A
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page Write Operation
    – 128 Bytes per Page, 1024 Pages
    – Page Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 5 sec (typical)
    – Effective Byte Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 90 and 120 ns
    – 3.0-3.6V operation: 150 and 200 ns
    – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32 Pin PDIP
    – 32-Pin PLCC
    – 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)

componentes Descripción : Dual Frequency Voltage Controlled Saw Oscillator

Description
The VS-550 is a SAW based voltage controlled oscillator that operates at the fundamental frequencies of the internal SAW filters. These SAW filters are high-Q quartz devices that enable the circuit to achieve low phase jitter performance over a wide operating temperature range. The dual oscillator is housed in a hermetically sealed J-lead surface mount package offered on tape and reel. It has a frequency select function that enables either “Frequency 1” or “Frequency 2.”

Features
• 9 x 14 x 3.5 mm Package
• Output Frequencies from 500 MHz to 850 MHz
• 3.3 V Operation
• Low Jitter < 0.25 ps-rms across 50 kHz to 80 MHz
• LV-PECL Configuration with Fast Transition Times
• Complementary Outputs
• Frequency Select Feature

Applications
PLL circuits for Clock Smoothing and Frequency Translation
Description                    Standard
• 10G Fibre Channel I           NCITS 364-2003
• 10GbE LAN / WAN           IEEE 802.3ae
• OC-192                    ITU-T G.709
• SONET / SDH              GR-253-CORE Issue3

componentes Descripción : HIGH VOLTAGE HALF BRIDGE

Description
The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use.

Features
• Output Power MOSFETs in half-bridge configuration
• 500V rated breakdown voltage
• High side gate drive designed for bootstrap operation
• Matched propagation delay for both channels
• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Half-Bridge output in phase with HIN
• Heatsink version (P2) with improved PD

componentes Descripción : HIGH VOLTAGE HALF BRIDGE

Description
The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use.

Features
• Output Power MOSFETs in half-bridge configuration
• 500V rated breakdown voltage
• High side gate drive designed for bootstrap operation
• Matched propagation delay for both channels
• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Half-Bridge output in phase with HIN
• Heatsink version (P2) with improved PD

 

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