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Número de piezaDescripción (Función)Fabricante
MBD301G Silicon Hot-Carrier Diodes Schottky Barrier Diodes ONSEMI
ON Semiconductor ONSEMI
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MBD301G Ficha de datos PDF : MBD301G pdf   
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These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
   
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
• S Prefix for Automotive and Other Applications Requiring Unique
    Site and Control Change Requirements; AEC−Q101 Qualified and
    PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
    Compliant
   

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