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T1L2003028-SP Hoja de datos - TriQuint Semiconductor

T1L2003028-SP image

Número de pieza
T1L2003028-SP

Other PDF
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page
4 Pages

File Size
369.4 kB

Fabricante
TriQuint
TriQuint Semiconductor 

Introduction
The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across the entire band when operated in the TriQuint wide-band test fixture. The T1L2003028-SP can also be used in narrow band applications and is rated at 45Watts P1dB at 2GHz.


FEATUREs
— Exceptional Instantaneous band-width performance from
   500MHz – 2GHz
— Increased efficiency results in significant advantages
   — Smaller and lighter systems
   — Reduced system component costs
   — Reduced energy consumption
— Typical Performance ratings
   — Wide-Band 500MHz-2GHz
      (as tested in TriQuint Wideband Fixture)
      — 10dB gain
      — 45% Efficiency
      — 30Watt P1dB
   — Narrow Band up to 2GHz
      — 14dB gain
      — 59% efficiency
      — 45Watt P1dB


Número de pieza
componentes Descripción
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Fabricante
30 W, 28V, 500 MHz?2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
PDF
TriQuint Semiconductor
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Qorvo, Inc
30 W, 28V DC ? 6 GHz, GaN RF Power Transistor
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Qorvo, Inc
LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
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M/A-COM Technology Solutions, Inc.
LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
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M/A-COM Technology Solutions, Inc.
10 W, 12V, 500 MHz?3GHz, PowerbandTM pHEMT RF Power Transistor
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TriQuint Semiconductor
LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V
PDF
M/A-COM Technology Solutions, Inc.

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