2SA1972(2009) Hoja de datos - Toshiba
Fabricante
Toshiba
High-Voltage Switching Applications
• High breakdown voltage: VCEO = −400 V
Número de pieza
componentes Descripción
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Fabricante
TOSHIBA Transistor Silicon PNP Triple Diffused Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1998 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1997 )
Toshiba
