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2SB1343 Hoja de datos - New Jersey Semiconductor

2SB1343 image

Número de pieza
2SB1343

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page
2 Pages

File Size
82.1 kB

Fabricante
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A)

APPLICATIONS
• Designed for power amplifier applications.

Page Link's: 1  2 
 

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