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2SB613 Hoja de datos - New Jersey Semiconductor

2SB613 image

Número de pieza
2SB613

componentes Descripción

Other PDF
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PDF
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page
2 Pages

File Size
78.9 kB

Fabricante
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min)
• High Power Dissipation- : PC= 150W(Max)@TC=25℃
• High Current Capability
• Complement to Type 2SD583

APPLICATIONS
• Designed for high power amplifier and switching applications

Page Link's: 1  2 
 

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