2SB786 Hoja de datos - Inchange Semiconductor
Fabricante
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -40V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -0.5A)
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for general-purpose amplifier and low-speed
switching applications.
Número de pieza
componentes Descripción
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Fabricante
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor