2SJ338(2004) Hoja de datos - Toshiba
Fabricante
Toshiba
Audio-Frequency Power Amplifier Applications
● High breakdown voltage : VDSS = −180 V
● High forward transfer admittance : |Yfs| = 0.7 S (typ.)
● Complementary to 2SK2162
Número de pieza
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Fabricante
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
