2SJ527S Hoja de datos - Hitachi -> Renesas Electronics
Fabricante
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
FEATUREs
• Low on-resistance
RDS(on)= 0.3 Ωtyp.
• Low drive current
• 4 V gete drive devices
• High speed switching
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Fabricante
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
