2SJ553STL-E Hoja de datos - Renesas Electronics
Número de pieza
2SJ553STL-E
Fabricante
Renesas Electronics
• Low on-resistance RDS(on)= 0.028Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Page Link's:
1
2
3
4
5
6
7
8
9
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
